Influences of increasing gate stem height on DC and RF performances of InAlAs/InGaAs InP-based HEMTs
Zhi-Hang Tong(童志航), Peng Ding(丁芃), Yong-Bo Su(苏永波), Da-Hai Wang(王大海), and Zhi Jin(金智)
中国物理B . 2021, (1): 18501 .  DOI: 10.1088/1674-1056/abb30d