Evaluation of stress voltage on off-state time-dependent breakdown for GaN MIS-HEMT with SiN <sub><i>x</i></sub> gate dielectric

Evaluation of stress voltage on off-state time-dependent breakdown for GaN MIS-HEMT with SiN _x gate dielectric

Tao-Tao Que(阙陶陶), Ya-Wen Zhao(赵亚文), Qiu-Ling Qiu(丘秋凌), Liu-An Li(李柳暗), Liang He(何亮), Jin-Wei Zhang(张津玮), Chen-Liang Feng(冯辰亮), Zhen-Xing Liu(刘振兴), Qian-Shu Wu(吴千树), Jia Chen(陈佳), Cheng-Lang Li(黎城朗), Qi Zhang(张琦), Yun-Liang Rao(饶运良), Zhi-Yuan He(贺致远), Yang Liu(刘扬)

中国物理B . 2020, (10): 107201 . DOI: 10.1088/1674-1056/abaed8