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Comparison of cavities and extended defects formed in helium-implanted 6H-SiC at room temperature and 750 ℃
廖庆, 李炳生, 康龙, 李小刚
Comparison of cavities and extended defects formed in helium-implanted 6H-SiC at room temperature and 750 ℃
Qing Liao(廖庆), Bingsheng Li(李炳生), Long Kang(康龙), Xiaogang Li(李小刚)
中国物理B . 2020, (
7
): 76103 -076103 . DOI: 10.1088/1674-1056/ab8abc