Experimental evaluation of interface states during time-dependent dielectric breakdown of GaN-based MIS-HEMTs with LPCVD-SiN <sub><i>x</i></sub> gate dielectric

Experimental evaluation of interface states during time-dependent dielectric breakdown of GaN-based MIS-HEMTs with LPCVD-SiN _x gate dielectric

赵亚文, 李柳暗, 阙陶陶, 丘秋凌, 何亮, 刘振兴, 张津玮, 吴千树, 陈佳, 吴志盛, 刘扬

Experimental evaluation of interface states during time-dependent dielectric breakdown of GaN-based MIS-HEMTs with LPCVD-SiN _x gate dielectric

Ya-Wen Zhao(赵亚文), Liu-An Li(李柳暗), Tao-Tao Que(阙陶陶), Qiu-Ling Qiu(丘秋凌), Liang He(何亮), Zhen-Xing Liu(刘振兴), Jin-Wei Zhang(张津玮), Qian-Shu Wu(吴千树), Jia Chen(陈佳), Zhi-Sheng Wu(吴志盛), Yang Liu(刘扬)

中国物理B . 2020, (6): 67203 -067203 . DOI: 10.1088/1674-1056/ab8895