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Dependence of limited radiative recombination rate of InGaN-based light-emitting diode on lattice temperature with high injection
高江东, 张建立, 全知觉, 刘军林, 江风益
Dependence of limited radiative recombination rate of InGaN-based light-emitting diode on lattice temperature with high injection
Jiang-Dong Gao(高江东), Jian-Li Zhang(张建立), Zhi-Jue Quan(全知觉), Jun-Lin Liu(刘军林), Feng-Yi Jiang(江风益)
中国物理B . 2020, (
4
): 47802 -047802 . DOI: 10.1088/1674-1056/ab790a