Characteristics of AlGaN/GaN high electron mobility transistors on metallic substrate
赵明龙, 唐先胜, 霍雯雪, 韩丽丽, 邓震, 江洋, 王文新, 陈弘, 杜春花, 贾海强
Characteristics of AlGaN/GaN high electron mobility transistors on metallic substrate
Minglong Zhao(赵明龙), Xiansheng Tang(唐先胜), Wenxue Huo(霍雯雪), Lili Han(韩丽丽), Zhen Deng(邓震), Yang Jiang(江洋), Wenxin Wang(王文新), Hong Chen(陈弘), Chunhua Du(杜春花), Haiqiang Jia(贾海强)
中国物理B
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2020, (4): 48104
-048104
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DOI: 10.1088/1674-1056/ab7d9c