Effect of overdrive voltage on PBTI trapping behavior in GaN MIS-HEMT with LPCVD SiN
x gate dielectric
阙陶陶, 赵亚文, 李柳暗, 何亮, 丘秋凌, 刘振兴, 张津玮, 陈佳, 吴志盛, 刘扬
Effect of overdrive voltage on PBTI trapping behavior in GaN MIS-HEMT with LPCVD SiN
x gate dielectric
Tao-Tao Que(阙陶陶), Ya-Wen Zhao(赵亚文), Liu-An Li(李柳暗), Liang He(何亮), Qiu-Ling Qiu(丘秋凌), Zhen-Xing Liu(刘振兴), Jin-Wei Zhang(张津玮), Jia Chen(陈佳), Zhi-Sheng Wu(吴志盛), Yang Liu(刘扬)
中国物理B
.
2020, (3): 37201
-037201
.
DOI: 10.1088/1674-1056/ab696b