Effect of growth temperature of GaAs
xSb
1-x metamorphic buffer layer on electron mobility of InAs/AlSb heterostructures grown on Si substrate
张静, 吕红亮, 倪海桥, 杨施政, 崔晓然, 牛智川, 张义门, 张玉明
Effect of growth temperature of GaAs
xSb
1-x metamorphic buffer layer on electron mobility of InAs/AlSb heterostructures grown on Si substrate
Jing Zhang(张静), Hong-Liang Lv(吕红亮), Hai-Qiao Ni(倪海桥), Shi-Zheng Yang(杨施政), Xiao-Ran Cui(崔晓然), Zhi-Chuan Niu(牛智川), Yi-Men Zhang(张义门), Yu-Ming Zhang(张玉明)
中国物理B
.
2019, (11): 118102
-118102
.
DOI: 10.1088/1674-1056/ab4d49