Negative transconductance effect in p-GaN gate AlGaN/GaN HEMTs by traps in unintentionally doped GaN buffer layer
葛梅, 蔡青, 张保花, 陈敦军, 胡立群, 薛俊俊, 陆海, 张荣, 郑有炓
Negative transconductance effect in p-GaN gate AlGaN/GaN HEMTs by traps in unintentionally doped GaN buffer layer
Mei Ge(葛梅), Qing Cai(蔡青), Bao-Hua Zhang(张保花), Dun-Jun Chen(陈敦军), Li-Qun Hu(胡立群), Jun-Jun Xue(薛俊俊), Hai Lu(陆海), Rong Zhang(张荣), You-Dou Zheng(郑有炓)
中国物理B
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2019, (10): 107301
-107301
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DOI: 10.1088/1674-1056/ab3e00