Defects and electrical properties in Al-implanted 4H-SiC after activation annealing

汤益丹, 刘新宇, 周正东, 白云, 李诚瞻

Yi-Dan Tang(汤益丹), Xin-Yu Liu(刘新宇), Zheng-Dong Zhou(周正东), Yun Bai(白云), Cheng-Zhan Li(李诚瞻)

中国物理B . 2019, (10): 106101 -106101 . DOI: 10.1088/1674-1056/ab3cc2