Effects of active layer thickness on performance and stability of dual-active-layer amorphous InGaZnO thin-film transistors
霍文星, 梅增霞, 卢毅成, 韩祖银, 朱锐, 王涛, 隋妍心, 梁会力, 杜小龙
Effects of active layer thickness on performance and stability of dual-active-layer amorphous InGaZnO thin-film transistors
Wenxing Huo(霍文星), Zengxia Mei(梅增霞), Yicheng Lu(卢毅成), Zuyin Han(韩祖银), Rui Zhu(朱锐), Tao Wang(王涛), Yanxin Sui(隋妍心), Huili Liang(梁会力), Xiaolong Du(杜小龙)
中国物理B
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2019, (8): 87302
-087302
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DOI: 10.1088/1674-1056/28/8/087302