Temperature-dependent subband mobility characteristics in n-doped silicon junctionless nanowire transistor
窦亚梅, 韩伟华, 郭仰岩, 赵晓松, 张晓迪, 吴歆宇, 杨富华
Temperature-dependent subband mobility characteristics in n-doped silicon junctionless nanowire transistor
Ya-Mei Dou(窦亚梅), Wei-Hua Han(韩伟华), Yang-Yan Guo(郭仰岩), Xiao-Song Zhao(赵晓松), Xiao-Di Zhang(张晓迪), Xin-Yu Wu(吴歆宇), Fu-Hua Yang(杨富华)
中国物理B
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2019, (6): 66804
-066804
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DOI: 10.1088/1674-1056/28/6/066804