1.8-kV circular AlGaN/GaN/AlGaN double-heterostructure high electron mobility transistor
赵胜雷, 王之哲, 陈大正, 王茂俊, 戴扬, 马晓华, 张进成, 郝跃
1.8-kV circular AlGaN/GaN/AlGaN double-heterostructure high electron mobility transistor
Sheng-Lei Zhao(赵胜雷), Zhi-Zhe Wang(王之哲), Da-Zheng Chen(陈大正), Mao-Jun Wang(王茂俊), Yang Dai(戴扬), Xiao-Hua Ma(马晓华), Jin-Cheng Zhang(张进成), Yue Hao(郝跃)
中国物理B
.
2019, (2): 27301
-027301
.
DOI: 10.1088/1674-1056/28/2/027301