Influence of characteristics' measurement sequence on total ionizing dose effect in PDSOI nMOSFET
解鑫, 毕大伟, 胡志远, 朱慧龙, 张梦映, 张正选, 邹世昌
Influence of characteristics' measurement sequence on total ionizing dose effect in PDSOI nMOSFET
Xin Xie(解鑫), Da-Wei Bi(毕大伟), Zhi-Yuan Hu(胡志远), Hui-Long Zhu(朱慧龙), Meng-Ying Zhang(张梦映), Zheng-Xuan Zhang(张正选), Shi-Chang Zou(邹世昌)
中国物理B
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2018, (12): 128501
-128501
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DOI: 10.1088/1674-1056/27/12/128501