Characteristics and threshold voltage model of GaN-based FinFET with recessed gate
王冲, 王鑫, 郑雪峰, 王允, 何云龙, 田野, 何晴, 吴忌, 毛维, 马晓华, 张进成, 郝跃
Characteristics and threshold voltage model of GaN-based FinFET with recessed gate
Chong Wang(王冲), Xin Wang(王鑫), Xue-Feng Zheng(郑雪峰), Yun Wang(王允), Yun-Long He(何云龙), Ye Tian(田野), Qing He(何晴), Ji Wu(吴忌), Wei Mao(毛维), Xiao-Hua Ma(马晓华), Jin-Cheng Zhang(张进成), Yue Hao(郝跃)
中国物理B
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2018, (9): 97308
-097308
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DOI: 10.1088/1674-1056/27/9/097308