Temperature dependence on the electrical and physical performance of InAs/AlSb heterojunction and high electron mobility transistors
张静, 吕红亮, 倪海桥, 牛智川, 张玉明
Temperature dependence on the electrical and physical performance of InAs/AlSb heterojunction and high electron mobility transistors
Jing Zhang(张静), Hongliang Lv(吕红亮), Haiqiao Ni(倪海桥), Zhichuan Niu(牛智川), Yuming Zhang(张玉明)
中国物理B . 2018, (9): 97201 -097201 .  DOI: 10.1088/1674-1056/27/9/097201