Passivation of carbon dimer defects in amorphous SiO <sub>2</sub>/4H-SiC (0001) interface: A first-principles study

张轶杰, 尹志鹏, 苏艳, 王德君

Passivation of carbon dimer defects in amorphous SiO ₂/4H-SiC (0001) interface: A first-principles study

Yi-Jie Zhang(张轶杰), Zhi-Peng Yin(尹志鹏), Yan Su(苏艳), De-Jun Wang(王德君)

中国物理B . 2018, (4): 47103 -047103 . DOI: 10.1088/1674-1056/27/4/047103