Enhanced radiation-induced narrow channel effects in 0.13-μm PDSOI nMOSFETs with shallow trench isolation

张梦映, 胡志远, 毕大炜, 戴丽华, 张正选

Meng-Ying Zhang(张梦映), Zhi-Yuan Hu(胡志远), Da-Wei Bi(毕大炜), Li-Hua Dai(戴丽华), Zheng-Xuan Zhang(张正选)

中国物理B . 2018, (2): 28501 -028501 . DOI: 10.1088/1674-1056/27/2/028501