Effects of post-annealed floating gate on the performance of AlGaN/GaN heterostructure field-effect transistors
崔鹏, 林兆军, 付晨, 刘艳, 吕元杰
Effects of post-annealed floating gate on the performance of AlGaN/GaN heterostructure field-effect transistors
Peng Cui(崔鹏), Zhao-Jun Lin(林兆军), Chen Fu(付晨), Yan Liu(刘艳), Yuan-Jie Lv(吕元杰)
中国物理B . 2017, (12): 127102 -127102 .  DOI: 10.1088/1674-1056/26/12/127102