Ionizing radiation effect on single event upset sensitivity of ferroelectric random access memory
魏佳男, 郭红霞, 张凤祁, 罗尹虹, 丁李利, 潘霄宇, 张阳, 刘玉辉
Ionizing radiation effect on single event upset sensitivity of ferroelectric random access memory
Jia-Nan Wei(魏佳男), Hong-Xia Guo(郭红霞), Feng-Qi Zhang(张凤祁), Yin-Hong Luo(罗尹虹), Li-Li Ding(丁李利), Xiao-Yu Pan(潘霄宇), Yang Zhang(张阳), Yu-Hui Liu(刘玉辉)
中国物理B
.
2017, (9): 96102
-096102
.
DOI: 10.1088/1674-1056/26/9/096102