Total ionizing radiation-induced read bit-errors in toggle magnetoresistive random-access memory devices

崔岩, 杨玲, 高腾, 李博, 罗家俊

Yan Cui(崔岩), Ling Yang(杨玲), Teng Gao(高腾), Bo Li(李博), Jia-Jun Luo(罗家俊)

中国物理B . 2017, (8): 87501 -087501 . DOI: 10.1088/1674-1056/26/8/087501