Impact of neutron-induced displacement damage on the single event latchup sensitivity of bulk CMOS SRAM
潘霄宇, 郭红霞, 罗尹虹, 张凤祁, 丁李利, 魏佳男, 赵雯
Impact of neutron-induced displacement damage on the single event latchup sensitivity of bulk CMOS SRAM
Xiao-Yu Pan(潘霄宇), Hong-Xia Guo(郭红霞), Yin-Hong Luo(罗尹虹), Feng-Qi Zhang(张凤祁), Li-Li Ding(丁李利), Jia-Nan Wei(魏佳男), Wen Zhao(赵雯)
中国物理B
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2017, (1): 18501
-018501
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DOI: 10.1088/1674-1056/26/1/018501