Semipolar (11
22) and polar (0001) InGaN grown on sapphire substrate by using pulsed metal organic chemical vapor deposition
许晟瑞, 赵颖, 蒋仁渊, 姜腾, 任泽阳, 张进成, 郝跃
Semipolar (11
22) and polar (0001) InGaN grown on sapphire substrate by using pulsed metal organic chemical vapor deposition
Sheng-Rui Xu(许晟瑞), Ying Zhao(赵颖), Ren-Yuan Jiang(蒋仁渊), Teng Jiang(姜腾), Ze-Yang Ren(任泽阳), Jin-Cheng Zhang(张进成), Yue Hao(郝跃)
中国物理B
.
2017, (2): 27801
-027801
.
DOI: 10.1088/1674-1056/26/2/027801