A novel P-channel SOI LDMOS structure with non-depletion potential-clamped layer
李威, 郑直, 汪志刚, 李平, 付晓君, 何峥嵘, 刘凡, 杨丰, 向凡, 刘伦才
A novel P-channel SOI LDMOS structure with non-depletion potential-clamped layer
Wei Li(李威), Zhi Zheng(郑直), Zhigang Wang(汪志刚), Ping Li(李平), Xiaojun Fu(付晓君), Zhengrong He(何峥嵘), Fan Liu(刘凡), Feng Yang(杨丰), Fan Xiang(向凡), Luncai Liu(刘伦才)
中国物理B
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2017, (1): 17701
-017701
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DOI: 10.1088/1674-1056/26/1/017701