Control of epitaxial growth at a-Si: H/c-Si heterointerface by the working pressure in PECVD
沈艳娇, 陈剑辉, 杨静, 陈兵兵, 陈静伟, 李峰, 代秀红, 刘海旭, 许颖, 麦耀华
Control of epitaxial growth at a-Si: H/c-Si heterointerface by the working pressure in PECVD
Yanjiao Shen(沈艳娇), Jianhui Chen(陈剑辉), Jing Yang(杨静), Bingbing Chen(陈兵兵), Jingwei Chen(陈静伟), Feng Li(李峰), Xiuhong Dai(代秀红), Haixu Liu(刘海旭), Ying Xu(许颖), Yaohua Mai(麦耀华)
中国物理B
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2016, (11): 118801
-118801
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DOI: 10.1088/1674-1056/25/11/118801