Electronic transport properties of silicon junctionless nanowire transistors fabricated by femtosecond laser direct writing
马刘红, 韩伟华, 王昊, 吕奇峰, 张望, 杨香, 杨富华
Electronic transport properties of silicon junctionless nanowire transistors fabricated by femtosecond laser direct writing
Liu-Hong Ma(马刘红), Wei-Hua Han(韩伟华), Hao Wang(王昊), Qi-feng Lyu(吕奇峰), Wang Zhang(张望), Xiang Yang(杨香), Fu-Hua Yang(杨富华)
中国物理B
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2016, (6): 68103
-068103
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DOI: 10.1088/1674-1056/25/6/068103