High temperature characteristics of bilayer epitaxial graphene field-effect transistors on SiC Substrate
何泽召, 杨克武, 蔚翠, 刘庆彬, 王晶晶, 李佳, 芦伟立, 冯志红, 蔡树军
High temperature characteristics of bilayer epitaxial graphene field-effect transistors on SiC Substrate
Ze-Zhao He(何泽召), Ke-Wu Yang(杨克武), Cui Yu(蔚翠), Qing-Bin Liu(刘庆彬), Jing-Jing Wang(王晶晶), Jia Li(李佳), Wei-Li Lu(芦伟立), Zhi-Hong Feng(冯志红), Shu-Jun Cai(蔡树军)
中国物理B
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2016, (6): 67206
-067206
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DOI: 10.1088/1674-1056/25/6/067206