Understanding of surface pit formation mechanism of GaN grown in MOCVD based on local thermodynamic equilibrium assumption
高志远, 薛晓玮, 李江江, 王勋, 邢艳辉, 崔碧峰, 邹德恕
Understanding of surface pit formation mechanism of GaN grown in MOCVD based on local thermodynamic equilibrium assumption
Zhi-Yuan Gao(高志远), Xiao-Wei Xue(薛晓玮), Jiang-Jiang Li(李江江), Xun Wang(王勋), Yan-Hui Xing(邢艳辉), Bi-Feng Cui(崔碧峰), De-Shu Zou(邹德恕)
中国物理B
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2016, (6): 66105
-066105
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DOI: 10.1088/1674-1056/25/6/066105