Mobility enhancement of strained GaSb p-channel metal—oxide—semiconductor field-effect transistorswith biaxial compressive strain
陈燕文, 谭桢, 赵连锋, 王敬, 刘易周, 司晨, 袁方, 段文晖, 许军
Mobility enhancement of strained GaSb p-channel metal—oxide—semiconductor field-effect transistorswith biaxial compressive strain
Yan-Wen Chen(陈燕文), Zhen Tan(谭桢), Lian-Feng Zhao(赵连锋), Jing Wang(王敬), Yi-Zhou Liu(刘易周),Chen Si(司晨), Fang Yuan(袁方), Wen-Hui Duan(段文晖), Jun Xu(许军)
中国物理B
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2016, (3): 38504
-038504
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DOI: 10.1088/1674-1056/25/3/038504