A uniform doping ultra-thin SOI LDMOS with accumulation-mode extended gate and back-side etching technology
张彦辉, 魏杰, 尹超, 谭桥, 刘建平, 李鹏程, 罗小蓉
A uniform doping ultra-thin SOI LDMOS with accumulation-mode extended gate and back-side etching technology
Yan-Hui Zhang(张彦辉), Jie Wei(魏杰), Chao Yin(尹超), Qiao Tan(谭桥), Jian-Ping Liu(刘建平), Peng-Cheng Li(李鹏程), Xiao-Rong Luo(罗小蓉)
中国物理B
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2016, (2): 27306
-027306
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DOI: 10.1088/1674-1056/25/2/027306