Effect of gate length on breakdown voltage in AlGaN/GaN high-electron-mobility transistor
罗俊, 赵胜雷, 宓珉瀚, 陈伟伟, 侯斌, 张进成, 马晓华, 郝跃
Effect of gate length on breakdown voltage in AlGaN/GaN high-electron-mobility transistor
Jun Luo(罗俊), Sheng-Lei Zhao(赵胜雷), Min-Han Mi(宓珉瀚), Wei-Wei Chen(陈伟伟), Bin Hou(侯斌), Jin-Cheng Zhang(张进成), Xiao-Hua Ma(马晓华), Yue Hao(郝跃)
中国物理B
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2016, (2): 27303
-027303
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DOI: 10.1088/1674-1056/25/2/027303