Influence of ultra-thin TiN thickness (1.4 nm and 2.4 nm) on positive bias temperature instability (PBTI) of high-
k/metal gate nMOSFETs with gate-last process
祁路伟, 杨红, 任尚清, 徐烨峰, 罗维春, 徐昊, 王艳蓉, 唐波, 王文武, 闫江, 朱慧珑, 赵超, 陈大鹏, 叶甜春
Influence of ultra-thin TiN thickness (1.4 nm and 2.4 nm) on positive bias temperature instability (PBTI) of high-
k/metal gate nMOSFETs with gate-last process
Qi Lu-Wei (祁路伟), Yang Hong (杨红), Ren Shang-Qing (任尚清), Xu Ye-Feng (徐烨峰), Luo Wei-Chun (罗维春), Xu Hao (徐昊), Wang Yan-Rong (王艳蓉), Tang Bo (唐波), Wang Wen-Wu (王文武), Yan Jiang (闫江), Zhu Hui-Long (朱慧珑), Zhao Chao (赵超), Chen Da-Peng (陈大鹏), Ye Tian-Chun (叶甜春)
中国物理B
.
2015, (12): 127305
-127305
.
DOI: 10.1088/1674-1056/24/12/127305