High- k gate dielectric GaAs MOS device with LaON as interlayer and NH 3-plasma surface pretreatment
刘超文, 徐静平, 刘璐, 卢汉汉
High- k gate dielectric GaAs MOS device with LaON as interlayer and NH 3-plasma surface pretreatment
Liu Chao-Wen (刘超文), Xu Jing-Ping (徐静平), Liu Lu (刘璐), Lu Han-Han (卢汉汉)
中国物理B . 2015, (12): 127304 -127304 .  DOI: 10.1088/1674-1056/24/12/127304