AlGaN/GaN high electron mobility transistorwith Al
2O
3+BCB passivation
张昇, 魏珂, 余乐, 刘果果, 黄森, 王鑫华, 庞磊, 郑英奎, 李艳奎, 马晓华, 孙兵, 刘新宇
AlGaN/GaN high electron mobility transistorwith Al
2O
3+BCB passivation
Zhang Sheng (张昇), Wei Ke (魏珂), Yu Le (余乐), Liu Guo-Guo (刘果果), Huang Sen (黄森), Wang Xin-Hua (王鑫华), Pang Lei (庞磊), Zheng Ying-Kui (郑英奎), Li Yan-Kui (李艳奎), Ma Xiao-Hua (马晓华), Sun Bing (孙兵), Liu Xin-Yu (刘新宇)
中国物理B
.
2015, (11): 117307
-117307
.
DOI: 10.1088/1674-1056/24/11/117307