Influence of multi-deposition multi-annealing on time-dependent dielectric breakdown characteristics of PMOS with high-
k/metal gate last process
王艳蓉, 杨红, 徐昊, 王晓磊, 罗维春, 祁路伟, 张淑祥, 王文武, 闫江, 朱慧珑, 赵超, 陈大鹏, 叶甜春
Influence of multi-deposition multi-annealing on time-dependent dielectric breakdown characteristics of PMOS with high-
k/metal gate last process
Wang Yan-Rong (王艳蓉), Yang Hong (杨红), Xu Hao (徐昊), Wang Xiao-Lei (王晓磊), Luo Wei-Chun (罗维春), Qi Lu-Wei (祁路伟), Zhang Shu-Xiang (张淑祥), Wang Wen-Wu (王文武), Yan Jiang (闫江), Zhu Hui-Long (朱慧珑), Zhao Chao (赵超), Chen Da-Peng (陈大鹏), Ye Tian-Chun (叶甜春)
中国物理B
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2015, (11): 117306
-117306
.
DOI: 10.1088/1674-1056/24/11/117306