Trap states induced by reactive ion etching in AlGaN/GaN high-electron-mobility transistors
罗俊, 赵胜雷, 宓珉瀚, 侯斌, 杨晓蕾, 张进成, 马晓华, 郝跃
Trap states induced by reactive ion etching in AlGaN/GaN high-electron-mobility transistors
Luo Jun (罗俊), Zhao Sheng-Lei (赵胜雷), Mi Min-Han (宓珉瀚), Hou Bin (侯斌), Yang Xiao-Lei (杨晓蕾), Zhang Jin-Cheng (张进成), Ma Xiao-Hua (马晓华), Hao Yue (郝跃)
中国物理B
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2015, (11): 117305
-117305
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DOI: 10.1088/1674-1056/24/11/117305