Electronic mobility in the high-carrier-density limit ofion gel gated IDTBT thin film transistors
包蓓, 邵宪一, 谭璐, 王文河, 吴越珅, 文理斌, 赵家庆, 唐伟, 张为民, 郭小军, 王顺, 刘荧
Electronic mobility in the high-carrier-density limit ofion gel gated IDTBT thin film transistors
Bao Bei (包蓓), Shao Xian-Yi (邵宪一), Tan Lu (谭璐), Wang Wen-He (王文河), Wu Yue-Shen (吴越珅), Wen Li-Bin (文理斌), Zhao Jia-Qing (赵家庆), Tang Wei (唐伟), Zhang Wei-Min (张为民), Guo Xiao-Jun (郭小军), Wang Shun (王顺), Liu Ying (刘荧)
中国物理B
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2015, (9): 98103
-098103
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DOI: 10.1088/1674-1056/24/9/098103