Influence of the AlGaN barrier thickness on polarization Coulomb field scattering in an AlGaN/AlN/GaN heterostructure field-effect transistor
吕元杰, 冯志红, 顾国栋, 尹甲运, 房玉龙, 王元刚, 谭鑫, 周幸叶, 林兆军, 冀子武, 蔡树军
Influence of the AlGaN barrier thickness on polarization Coulomb field scattering in an AlGaN/AlN/GaN heterostructure field-effect transistor
Lv Yuan-Jie (吕元杰), Feng Zhi-Hong (冯志红), Gu Guo-Dong (顾国栋), Yin Jia-Yun (尹甲运), Fang Yu-Long (房玉龙), Wang Yuan-Gang (王元刚), Tan Xin (谭鑫), Zhou Xing-Ye (周幸叶), Lin Zhao-Jun (林兆军), Ji Zi-Wu (冀子武), Cai Shu-Jun (蔡树军)
中国物理B
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2015, (8): 87306
-087306
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DOI: 10.1088/1674-1056/24/8/087306