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Non-ideal effect in 4H—SiC bipolar junction transistor with double Gaussian-doped base
元磊, 张玉明, 宋庆文, 汤晓燕, 张义门
Non-ideal effect in 4H—SiC bipolar junction transistor with double Gaussian-doped base
Yuan Lei (元磊), Zhang Yu-Ming (张玉明), Song Qing-Wen (宋庆文), Tang Xiao-Yan (汤晓燕), Zhang Yi-Men (张义门)
中国物理B . 2015, (
6
): 68502 -068502 . DOI: 10.1088/1674-1056/24/6/068502