Influences of fringing capacitance on threshold voltage and subthreshold swing of a GeOI metal-oxide-semiconductor field-effect transistor
范敏敏, 徐静平, 刘璐, 白玉蓉, 黄勇
Influences of fringing capacitance on threshold voltage and subthreshold swing of a GeOI metal-oxide-semiconductor field-effect transistor
Fan Min-Min (范敏敏), Xu Jing-Ping (徐静平), Liu Lu (刘璐), Bai Yu-Rong (白玉蓉), Huang Yong (黄勇)
中国物理B . 2015, (3): 37303 -037303 .  DOI: 10.1088/1674-1056/24/3/037303