Improvement of the off-state breakdown voltage with field plate and low-density drain in AlGaN/GaN high-electron mobility transistors
张鹏, 赵胜雷, 侯斌, 王冲, 郑雪峰, 马晓华, 张进成, 郝跃
Improvement of the off-state breakdown voltage with field plate and low-density drain in AlGaN/GaN high-electron mobility transistors
Zhang Peng (张鹏), Zhao Sheng-Lei (赵胜雷), Hou Bin (侯斌), Wang Chong (王冲), Zheng Xue-Feng (郑雪峰), Ma Xiao-Hua (马晓华), Zhang Jin-Cheng (张进成), Hao Yue (郝跃)
中国物理B
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2015, (3): 37304
-037304
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DOI: 10.1088/1674-1056/24/3/037304