Breakdown mechanisms in AlGaN/GaN high electron mobility transistors with different GaN channel thickness values
马晓华, 张亚嫚, 王鑫华, 袁婷婷, 庞磊, 陈伟伟, 刘新宇
Breakdown mechanisms in AlGaN/GaN high electron mobility transistors with different GaN channel thickness values
Ma Xiao-Hua (马晓华), Zhang Ya-Man (张亚嫚), Wang Xin-Hua (王鑫华), Yuan Ting-Ting (袁婷婷), Pang Lei (庞磊), Chen Wei-Wei (陈伟伟), Liu Xin-Yu (刘新宇)
Chin. Phys. B
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2015, (2): 27101
-027101
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DOI: 10.1088/1674-1056/24/2/027101