Transport mechanism of reverse surface leakage current in AlGaN/GaN high-electron mobility transistor with SiN passivation
郑雪峰, 范爽, 陈永和, 康迪, 张建坤, 王冲, 默江辉, 李亮, 马晓华, 张进成, 郝跃
Transport mechanism of reverse surface leakage current in AlGaN/GaN high-electron mobility transistor with SiN passivation
Zheng Xue-Feng (郑雪峰), Fan Shuang (范爽), Chen Yong-He (陈永和), Kang Di (康迪), Zhang Jian-Kun (张建坤), Wang Chong (王冲), Mo Jiang-Hui (默江辉), Li Liang (李亮), Ma Xiao-Hua (马晓华), Zhang Jin-Cheng (张进成), Hao Yue (郝跃)
中国物理B
.
2015, (2): 27302
-027302
.
DOI: 10.1088/1674-1056/24/2/027302