Degradation mechanism of enhancement-mode AlGaN/GaN HEMTs using fluorine ion implantation under the on-state gate overdrive stress
孙伟伟, 郑雪峰, 范爽, 王冲, 杜鸣, 张凯, 陈伟伟, 曹艳荣, 毛维, 马晓华, 张进成, 郝跃
Degradation mechanism of enhancement-mode AlGaN/GaN HEMTs using fluorine ion implantation under the on-state gate overdrive stress
Sun Wei-Wei (孙伟伟), Zheng Xue-Feng (郑雪峰), Fan Shuang (范爽), Wang Chong (王冲), Du Ming (杜鸣), Zhang Kai (张凯), Chen Wei-Wei (陈伟伟), Cao Yan-Rong (曹艳荣), Mao Wei (毛维), Ma Xiao-Hua (马晓华), Zhang Jin-Cheng (张进成), Hao Yue (郝跃)
中国物理B
.
2015, (1): 17303
-017303
.
DOI: 10.1088/1674-1056/24/1/017303