Resistive switching characteristics of Ti/ZrO
2/Pt RRAM device
雷晓艺, 刘红侠, 高海霞, 杨哈妮, 王国明, 龙世兵, 马晓华, 刘明
Resistive switching characteristics of Ti/ZrO
2/Pt RRAM device
Lei Xiao-Yi (雷晓艺), Liu Hong-Xia (刘红侠), Gao Hai-Xia (高海霞), Yang Ha-Ni (杨哈妮), Wang Guo-Ming (王国明), Long Shi-Bing (龙世兵), Ma Xiao-Hua (马晓华), Liu Ming (刘明)
中国物理B
.
2014, (11): 117305
-117305
.
DOI: 10.1088/1674-1056/23/11/117305