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Investigation of strain effect on the hole mobility in GOI tri-gate pFETs including quantum confinement
秦洁宇, 杜刚, 刘晓彦
Investigation of strain effect on the hole mobility in GOI tri-gate pFETs including quantum confinement
Qin Jie-Yu (秦洁宇), Du Gang (杜刚), Liu Xiao-Yan (刘晓彦)
中国物理B . 2014, (
10
): 108501 -108501 . DOI: 10.1088/1674-1056/23/10/108501