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First-principles calculations on Si (220) located 6H-SiC (10
1
0) surface with different stacking sites
贺小敏, 陈治明, 蒲红斌, 李连碧, 黄磊
First-principles calculations on Si (220) located 6H-SiC (10
1
0) surface with different stacking sites
He Xiao-Min (贺小敏), Chen Zhi-Ming (陈治明), Pu Hong-Bin (蒲红斌), Li Lian-Bi (李连碧), Huang Lei (黄磊)
Chin. Phys. B . 2014, (
10
): 106802 -106802 . DOI: 10.1088/1674-1056/23/10/106802