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Characterization of tetragonal distortion in a thick Al
0.2
Ga
0.8
N epilayer with an AlN interlayer by Rutherford backscattering/channeling
王欢, 姚淑德
Characterization of tetragonal distortion in a thick Al
0.2
Ga
0.8
N epilayer with an AlN interlayer by Rutherford backscattering/channeling
Wang Huan (王欢), Yao Shu-De (姚淑德)
Chin. Phys. B . 2014, (
9
): 96801 -096801 . DOI: 10.1088/1674-1056/23/9/096801