Reverse blocking enhancement of drain field plate in Schottky-drain AlGaN/GaN high-electron mobility transistors
赵胜雷, 王媛, 杨晓蕾, 林志宇, 王冲, 张进成, 马晓华, 郝跃
Reverse blocking enhancement of drain field plate in Schottky-drain AlGaN/GaN high-electron mobility transistors
Zhao Sheng-Lei (赵胜雷), Wang Yuan (王媛), Yang Xiao-Lei (杨晓蕾), Lin Zhi-Yu (林志宇), Wang Chong (王冲), Zhang Jin-Cheng (张进成), Ma Xiao-Hua (马晓华), Hao Yue (郝跃)
Chin. Phys. B
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2014, (9): 97305
-097305
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DOI: 10.1088/1674-1056/23/9/097305