Bipolar resistance switching in the fully transparent BaSnO
3-based memory device
张婷, 殷江, 赵高峰, 张伟风, 夏奕东, 刘治国
Bipolar resistance switching in the fully transparent BaSnO
3-based memory device
Zhang Ting (张婷), Yin Jiang (殷江), Zhao Gao-Feng (赵高峰), Zhang Wei-Feng (张伟风), Xia Yi-Dong (夏奕东), Liu Zhi-Guo (刘治国)
Chin. Phys. B
.
2014, (8): 87304
-087304
.
DOI: 10.1088/1674-1056/23/8/087304